(China (Mainland))
Product Summary
The VQ1001P is a quad N-Channel 30-V (D-S) MOSFET featured with low on-resistance, low threshold, low input capacitance, fast switching speed, low input and output leakage. It is widly applied in many palces, such as direct logic-level interface: TTL/CMOS; drivers: relays, solenoids, lamps, hammers, displays, memories, transistors; battery operated systems; solid-state relays and so on.
Parametrics
Absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30v(single); (2)Gate-Source Voltage, VGS: ±20v(single); (3)Continuous Drain Current (TJ = 150C), ID: 0.83 A(single) at TA= 25℃; 0.53 A(single) at TA= 100℃; (4)Pulsed Drain Currenta, IDM: 3 A(single); (5)Power Dissipation (Single),pd: 1.3 W(single), 2W(total quad) at TA= 25℃; 0.52W(single), 0.8 W(total quad) at TA= 100℃; (6)Thermal Resistance, Junction-to-Ambient (Single), RthJA: 96 ℃/W(single); 62.5 ℃/W(total quad); (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.
Features
Features: (1)Low On-Resistance: 0.85Ω; (2)Low Threshold: 1.4 V; (3)Low Input Capacitance: 38 pF; (4)Fast Switching Speed: 9 ns; (5)Low Input and Output Leakage.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 VQ1001P |
Vishay/Siliconix |
MOSFET QD 30V 0.53A |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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VQ1000J |
Vishay/Siliconix |
MOSFET QD 60V 0.225A |
Data Sheet |
Negotiable |
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VQ1000P |
Vishay/Siliconix |
MOSFET QD 60V 0.225A |
Data Sheet |
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VQ1001J |
Vishay/Siliconix |
MOSFET QD 30V 0.83A |
Data Sheet |
Negotiable |
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VQ1001P |
Vishay/Siliconix |
MOSFET QD 30V 0.53A |
Data Sheet |
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VQ1000P-E3 |
Vishay/Siliconix |
MOSFET N-CH 60V 0.225A |
Data Sheet |
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VQ1006P |
Vishay/Siliconix |
MOSFET 90V QUAD N-CHANNEL MOSFET |
Data Sheet |
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